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J610-TL-E-VB Product details
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J610-TL-E-VB Product Introduction
J610-TL-E-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage applications. Its rated drain-source voltage (VDS) is -250V, and it can support gate-source voltage (VGS) up to ±20V. The device has a turn-on threshold voltage (Vth) of -2V, which is suitable for lower control voltages. The on-resistance (RDS(ON)) of J610-TL-E-VB is 1200mΩ at VGS of 4.5V and 1000mΩ at VGS of 10V. Despite the high on-resistance, it can operate stably under heavy loads, with a maximum drain current (ID) of -6A. This MOSFET uses Trench technology, has excellent thermal management characteristics and high efficiency, and is suitable for a variety of power and switching applications.
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J610-TL-E-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage applications. Its rated drain-source voltage (VDS) is -250V, and it can support gate-source voltage (VGS) up to ±20V. The device has a turn-on threshold voltage (Vth) of -2V, which is suitable for lower control voltages. The on-resistance (RDS(ON)) of J610-TL-E-VB is 1200mΩ at VGS of 4.5V and 1000mΩ at VGS of 10V. Despite the high on-resistance, it can operate stably under heavy loads, with a maximum drain current (ID) of -6A. This MOSFET uses Trench technology, has excellent thermal management characteristics and high efficiency, and is suitable for a variety of power and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: J610-TL-E-VB
- **Package**: TO252
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 1200mΩ @ VGS=4.5V
- 1000mΩ @ VGS=10V
- **Drain current (ID)**: -6A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 100W
- **Thermal resistance (RθJC)**: 2.5°C/W
- **Operating temperature range**: -55°C to 150°C
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- **Model**: J610-TL-E-VB
- **Package**: TO252
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 1200mΩ @ VGS=4.5V
- 1000mΩ @ VGS=10V
- **Drain current (ID)**: -6A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 100W
- **Thermal resistance (RθJC)**: 2.5°C/W
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Applications and module descriptions
1. **High-voltage power management**: J610-TL-E-VB is particularly suitable for high-voltage DC-DC converters and power adapters. This high-voltage MOSFET can provide stable performance during power conversion, helping to improve system efficiency.
2. **Electric vehicles and battery management**: In the battery management system of electric vehicles, J610-TL-E-VB can effectively control the battery charging and discharging process, can handle large currents and withstand high voltages, and is suitable for battery protection and monitoring applications.
3. **Industrial control and automation**: This MOSFET is also suitable for switching and control applications in industrial automation systems, especially in situations where high voltage and medium current are required, such as motor drive and relay control.
4. **Renewable energy system**: J610-TL-E-VB can also play an important role in solar inverters and wind power generation systems, and can efficiently manage the power output from photovoltaic cells or wind turbines to ensure efficient conversion and system stability. Its high voltage capability makes it particularly suitable for use with high voltage renewable energy systems.
1. **High-voltage power management**: J610-TL-E-VB is particularly suitable for high-voltage DC-DC converters and power adapters. This high-voltage MOSFET can provide stable performance during power conversion, helping to improve system efficiency.
2. **Electric vehicles and battery management**: In the battery management system of electric vehicles, J610-TL-E-VB can effectively control the battery charging and discharging process, can handle large currents and withstand high voltages, and is suitable for battery protection and monitoring applications.
3. **Industrial control and automation**: This MOSFET is also suitable for switching and control applications in industrial automation systems, especially in situations where high voltage and medium current are required, such as motor drive and relay control.
4. **Renewable energy system**: J610-TL-E-VB can also play an important role in solar inverters and wind power generation systems, and can efficiently manage the power output from photovoltaic cells or wind turbines to ensure efficient conversion and system stability. Its high voltage capability makes it particularly suitable for use with high voltage renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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