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J601-Z-E1-AZ-VB Product details
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J601-Z-E1-AZ-VB Product Introduction
J601-Z-E1-AZ-VB is a high-performance unipolar P-type MOSFET in TO252 package, designed for medium voltage and high current applications. The device supports drain-source voltage up to -60V, combined with advanced Trench technology, to achieve extremely low on-resistance, making it excellent in power management and load switching. J601-Z-E1-AZ-VB is suitable for a variety of application scenarios, ensuring efficient and reliable operation.
J601-Z-E1-AZ-VB is a high-performance unipolar P-type MOSFET in TO252 package, designed for medium voltage and high current applications. The device supports drain-source voltage up to -60V, combined with advanced Trench technology, to achieve extremely low on-resistance, making it excellent in power management and load switching. J601-Z-E1-AZ-VB is suitable for a variety of application scenarios, ensuring efficient and reliable operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: J601-Z-E1-AZ-VB
- **Package**: TO252
- **Configuration**: Unipolar P type
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -50A
- **Technology**: Trench
- **Model**: J601-Z-E1-AZ-VB
- **Package**: TO252
- **Configuration**: Unipolar P type
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -50A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The J601-Z-E1-AZ-VB exhibits excellent performance in multiple applications, especially for power management and high-power load switching. In switching power supply design, this MOSFET can efficiently regulate voltage, reduce energy consumption and improve efficiency. At the same time, it also performs well in motor drive applications, can withstand high currents and achieve fast switching. In addition, the J601-Z-E1-AZ-VB is suitable for battery management systems and consumer electronics to ensure safety and stability under high load conditions. In short, this device is an ideal choice for efficient and reliable power management.
The J601-Z-E1-AZ-VB exhibits excellent performance in multiple applications, especially for power management and high-power load switching. In switching power supply design, this MOSFET can efficiently regulate voltage, reduce energy consumption and improve efficiency. At the same time, it also performs well in motor drive applications, can withstand high currents and achieve fast switching. In addition, the J601-Z-E1-AZ-VB is suitable for battery management systems and consumer electronics to ensure safety and stability under high load conditions. In short, this device is an ideal choice for efficient and reliable power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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