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J600-Z-E1-AZ-VB Product details
Back to previous pageProduct introduction：
：**
J600-Z-E1-AZ-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of -60V, it can carry a drain current of up to -35A, suitable for a variety of high-performance circuit applications. With its low on-resistance (RDS(ON) of 46mΩ@VGS=10V), this MOSFET performs well under high load conditions and can effectively reduce power consumption.
**
J600-Z-E1-AZ-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of -60V, it can carry a drain current of up to -35A, suitable for a variety of high-performance circuit applications. With its low on-resistance (RDS(ON) of 46mΩ@VGS=10V), this MOSFET performs well under high load conditions and can effectively reduce power consumption.
**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
：**
- **Package:** TO252
- **Configuration:** Single P-channel
- **VDS:** -60V
- **VGS:** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 58mΩ (at VGS=4.5V)
- 46mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** -35A
- **Technology:** Trench
**
- **Package:** TO252
- **Configuration:** Single P-channel
- **VDS:** -60V
- **VGS:** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 58mΩ (at VGS=4.5V)
- 46mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** -35A
- **Technology:** Trench
**
Domain and module applications：
Example: **
J600-Z-E1-AZ-VB is widely used in power management, motor drive, and various industrial automation systems. Its high current handling capability and low on-resistance make it very suitable for use in battery management systems, DC-DC converters, and switching power supply modules. In these applications, this MOSFET can significantly improve system efficiency and reduce heat loss, thereby extending the service life of the equipment.
J600-Z-E1-AZ-VB is widely used in power management, motor drive, and various industrial automation systems. Its high current handling capability and low on-resistance make it very suitable for use in battery management systems, DC-DC converters, and switching power supply modules. In these applications, this MOSFET can significantly improve system efficiency and reduce heat loss, thereby extending the service life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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