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J599-Z-E2-AZ-VB Product details
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Product Introduction
J599-Z-E2-AZ-VB is a high-efficiency P-type MOSFET in TO252 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is -60V and the maximum continuous current reaches -35A. The device uses Trench technology and has low on-resistance, making it suitable for operation in power management systems that require high efficiency and low energy loss.
J599-Z-E2-AZ-VB is a high-efficiency P-type MOSFET in TO252 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is -60V and the maximum continuous current reaches -35A. The device uses Trench technology and has low on-resistance, making it suitable for operation in power management systems that require high efficiency and low energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **Maximum continuous current (ID)**: -35A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **Maximum continuous current (ID)**: -35A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J599-Z-E2-AZ-VB is suitable for multiple fields, including:
1. **Power management**: used as a switch in efficient DC-DC converters to reduce energy loss and improve overall conversion efficiency.
2. **Electric vehicles**: used in power distribution and drive circuits to ensure efficient power transmission and energy recovery.
3. **Industrial automation**: provides stable power control in load switches and drive circuits to support efficient system performance.
4. **Consumer electronics**: used in portable devices and battery management systems to optimize energy use and extend battery life.
J599-Z-E2-AZ-VB is suitable for multiple fields, including:
1. **Power management**: used as a switch in efficient DC-DC converters to reduce energy loss and improve overall conversion efficiency.
2. **Electric vehicles**: used in power distribution and drive circuits to ensure efficient power transmission and energy recovery.
3. **Industrial automation**: provides stable power control in load switches and drive circuits to support efficient system performance.
4. **Consumer electronics**: used in portable devices and battery management systems to optimize energy use and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
