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J599-Z-E1-AZ-VB Product details
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Product Introduction
The J599-Z-E1-AZ-VB is a high-performance P-channel MOSFET in a TO252 package, designed for applications requiring high performance and low on-resistance. The device has a maximum drain-source voltage (VDS) of -60V, making it suitable for negative voltage control circuits. Its on-resistance is 58mΩ at a gate voltage of 4.5V, decreasing to 46mΩ at 10V, ensuring efficient current transfer under high load conditions.
The J599-Z-E1-AZ-VB is a high-performance P-channel MOSFET in a TO252 package, designed for applications requiring high performance and low on-resistance. The device has a maximum drain-source voltage (VDS) of -60V, making it suitable for negative voltage control circuits. Its on-resistance is 58mΩ at a gate voltage of 4.5V, decreasing to 46mΩ at 10V, ensuring efficient current transfer under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 58mΩ @ VGS=4.5V
- **RDS(ON)**: 46mΩ @ VGS=10V
- **ID**: -35A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 58mΩ @ VGS=4.5V
- **RDS(ON)**: 46mΩ @ VGS=10V
- **ID**: -35A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J599-Z-E1-AZ-VB is widely used in many fields, especially in power management and switch control circuits. In switching power supplies, it can efficiently switch current and reduce energy loss, suitable for the design of DC-DC converters and inverters. This MOSFET can also be used in motor control systems to achieve smooth load regulation and drive. In automotive electronics and consumer electronics such as battery management systems, home appliances and smart devices, J599-VB provides reliable performance to help improve the overall energy efficiency and stability of the system.
J599-Z-E1-AZ-VB is widely used in many fields, especially in power management and switch control circuits. In switching power supplies, it can efficiently switch current and reduce energy loss, suitable for the design of DC-DC converters and inverters. This MOSFET can also be used in motor control systems to achieve smooth load regulation and drive. In automotive electronics and consumer electronics such as battery management systems, home appliances and smart devices, J599-VB provides reliable performance to help improve the overall energy efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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