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J538-VB Product details
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Product Introduction
J538-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage applications. Its maximum drain-source voltage (VDS) is -30V, suitable for negative voltage power supply environment. The device has an on-resistance of 46mΩ and 33mΩ at gate voltages of 4.5V and 10V, respectively, showing excellent conductivity and is suitable for high-efficiency power conversion and control applications.
J538-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage applications. Its maximum drain-source voltage (VDS) is -30V, suitable for negative voltage power supply environment. The device has an on-resistance of 46mΩ and 33mΩ at gate voltages of 4.5V and 10V, respectively, showing excellent conductivity and is suitable for high-efficiency power conversion and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J538-VB is widely used in a variety of electronic products, including power management and switching power supplies. In power management systems, this MOSFET can efficiently control current and improve overall energy efficiency, and is suitable for DC-DC converters and linear regulators. In switching power supplies, J538-VB can achieve fast switching to ensure the stability of the system under different loads. In addition, in motor control and consumer electronic devices, it can achieve precise load management and is suitable for various power tools, household appliances and automotive electronics to meet the energy efficiency and reliability needs of modern applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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