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J529S-VB Product details
Back to previous pageProduct introduction：
J529S-VB is a high-performance P-channel MOSFET in TO252 package, designed for medium voltage applications. Its excellent conduction performance and low on-resistance make it very suitable for power management and switching applications, and can provide efficient and reliable performance in various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**:
- 100mΩ（@VGS=4.5V）
- 90mΩ（@VGS=10V）
- **ID**: -30A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J529S-VB is widely used in switching power supplies, DC-DC converters, LED drive circuits and other fields. Its low on-resistance helps improve energy efficiency and reduce power consumption, making it particularly suitable for portable electronic devices and industrial control systems. In addition, this MOSFET also performs well in automotive electronics and battery management systems, ensuring system stability and reliability to meet a variety of application requirements.
Technical support：
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