中文
English
J506STR-VB Product details
Back to previous pageProduct introduction：
Product Introduction
J506STR-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage and high-performance applications. With its low on-resistance and fast switching capability, the device is suitable for a variety of power management and switching applications, and can perform well in environments with high performance and reliability requirements.
J506STR-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage and high-performance applications. With its low on-resistance and fast switching capability, the device is suitable for a variety of power management and switching applications, and can perform well in environments with high performance and reliability requirements.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**:
- 46mΩ（@VGS=4.5V）
- 33mΩ（@VGS=10V）
- **ID**: -38A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**:
- 46mΩ（@VGS=4.5V）
- 33mΩ（@VGS=10V）
- **ID**: -38A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J506STR-VB is widely used in portable electronic devices, DC-DC converters, LED drive circuits and other fields. Its low on-resistance effectively reduces power consumption and improves energy efficiency, especially suitable for space-constrained applications. In addition, this MOSFET is also well used in automotive electronics and industrial control systems to ensure system stability and efficiency to meet diverse needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
