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J503-VB Product details
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Product Introduction
J503-VB is a high-efficiency P-channel MOSFET in TO252 package, designed for low voltage and medium power applications. Its maximum drain-source voltage (VDS) is -30V, suitable for operation in negative voltage environments. The device has an on-resistance of 46mΩ and 33mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring good thermal management and high efficiency under a variety of operating conditions.
J503-VB is a high-efficiency P-channel MOSFET in TO252 package, designed for low voltage and medium power applications. Its maximum drain-source voltage (VDS) is -30V, suitable for operation in negative voltage environments. The device has an on-resistance of 46mΩ and 33mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring good thermal management and high efficiency under a variety of operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J503-VB is widely used in power management, switching power supply and motor control. In power management modules, this MOSFET is suitable for efficient DC-DC converters, providing stable output voltage and improving system efficiency. In switching power supply design, J503-VB can achieve fast switching and optimize overall energy efficiency. In addition, in motor control applications, it can effectively control current and is suitable for power tools and household appliances to ensure reliable performance under different load conditions.
J503-VB is widely used in power management, switching power supply and motor control. In power management modules, this MOSFET is suitable for efficient DC-DC converters, providing stable output voltage and improving system efficiency. In switching power supply design, J503-VB can achieve fast switching and optimize overall energy efficiency. In addition, in motor control applications, it can effectively control current and is suitable for power tools and household appliances to ensure reliable performance under different load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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