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J479S-VB Product details
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Product Introduction: J479S-VB
J479S-VB is a high-efficiency single P-channel MOSFET in TO263 package, designed for high current and low conduction loss applications. With its advanced Trench technology, the device exhibits excellent performance at higher voltages and currents. The low on-resistance of J479S-VB enables it to have excellent efficiency in various power management applications, especially suitable for high-performance electronic devices.
J479S-VB is a high-efficiency single P-channel MOSFET in TO263 package, designed for high current and low conduction loss applications. With its advanced Trench technology, the device exhibits excellent performance at higher voltages and currents. The low on-resistance of J479S-VB enables it to have excellent efficiency in various power management applications, especially suitable for high-performance electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Model**: J479S-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ (at VGS=4.5V)
- 8mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -75A
- **Technology type**: Trench technology
- **Model**: J479S-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ (at VGS=4.5V)
- 8mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -75A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples:
1. **Power management**:
J479S-VB is widely used in power management solutions such as DC-DC converters and battery management systems to efficiently control the flow of current and ensure the stability and efficiency of the equipment.
2. **Electric vehicles**:
In the drive circuit of electric vehicles, this MOSFET is used in high current applications to effectively manage the battery charging and discharging process and provide safe and efficient energy transmission.
3. **Industrial control**:
J479S-VB is suitable for switching circuits in industrial automation equipment to control motors and loads, achieve efficient power management, and improve overall system performance.
4. **LED lighting**:
In LED lighting systems, this MOSFET can be used to drive high-power LEDs, provide precise current control, and thus improve lighting effects and energy efficiency.
Through these application examples, J479S-VB demonstrates its strong applicability in multiple fields, meeting the requirements of modern electronic products for high performance and low power consumption.
1. **Power management**:
J479S-VB is widely used in power management solutions such as DC-DC converters and battery management systems to efficiently control the flow of current and ensure the stability and efficiency of the equipment.
2. **Electric vehicles**:
In the drive circuit of electric vehicles, this MOSFET is used in high current applications to effectively manage the battery charging and discharging process and provide safe and efficient energy transmission.
3. **Industrial control**:
J479S-VB is suitable for switching circuits in industrial automation equipment to control motors and loads, achieve efficient power management, and improve overall system performance.
4. **LED lighting**:
In LED lighting systems, this MOSFET can be used to drive high-power LEDs, provide precise current control, and thus improve lighting effects and energy efficiency.
Through these application examples, J479S-VB demonstrates its strong applicability in multiple fields, meeting the requirements of modern electronic products for high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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