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J477-01MR_06-VB Product details
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Product Introduction
The J477-01MR_06-VB is a high-efficiency P-channel MOSFET in a TO220F package designed for medium power and low voltage applications. Its maximum drain-source voltage (VDS) is -60V, suitable for operation in a negative voltage environment. The device has an on-resistance of 60mΩ and 50mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring superior thermal management and high efficiency under a variety of operating conditions.
The J477-01MR_06-VB is a high-efficiency P-channel MOSFET in a TO220F package designed for medium power and low voltage applications. Its maximum drain-source voltage (VDS) is -60V, suitable for operation in a negative voltage environment. The device has an on-resistance of 60mΩ and 50mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring superior thermal management and high efficiency under a variety of operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -30A | 50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 60mΩ @ VGS=4.5V
- **RDS(ON)**: 50mΩ @ VGS=10V
- **ID**: -30A
- **Technology**: Trench
- **Package**: TO220F
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 60mΩ @ VGS=4.5V
- **RDS(ON)**: 50mΩ @ VGS=10V
- **ID**: -30A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J477-01MR_06-VB is widely used in power management, switching power supply and motor drive. In power management modules, this MOSFET is very suitable for efficient DC-DC converters, providing stable output voltage and improving system efficiency. In switching power supply design, J477-01MR_06-VB can achieve fast switching and optimize overall energy efficiency. In addition, in motor drive applications, it can effectively control current and is suitable for power tools and household appliances to ensure reliable performance under different load conditions.
J477-01MR_06-VB is widely used in power management, switching power supply and motor drive. In power management modules, this MOSFET is very suitable for efficient DC-DC converters, providing stable output voltage and improving system efficiency. In switching power supply design, J477-01MR_06-VB can achieve fast switching and optimize overall energy efficiency. In addition, in motor drive applications, it can effectively control current and is suitable for power tools and household appliances to ensure reliable performance under different load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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