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J472-01L-VB TO251 Product details
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Product Introduction
The J472-01L-VB is a highly efficient P-channel MOSFET in a TO251 package designed for low voltage and medium power applications. Its maximum drain-source voltage (VDS) is -30V, making it suitable for operation in a negative voltage environment. The device has an on-resistance of 72mΩ and 56mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring that it provides excellent low power consumption and high efficiency in a variety of applications.
The J472-01L-VB is a highly efficient P-channel MOSFET in a TO251 package designed for low voltage and medium power applications. Its maximum drain-source voltage (VDS) is -30V, making it suitable for operation in a negative voltage environment. The device has an on-resistance of 72mΩ and 56mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring that it provides excellent low power consumption and high efficiency in a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 72mΩ @ VGS=4.5V
- **RDS(ON)**: 56mΩ @ VGS=10V
- **ID**: -20A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 72mΩ @ VGS=4.5V
- **RDS(ON)**: 56mΩ @ VGS=10V
- **ID**: -20A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J472-01L-VB is widely used in power management, DC-DC converters, switching power supplies and other fields. In power management modules, this MOSFET can effectively reduce energy loss, provide stable output voltage, and improve overall system efficiency. In DC-DC converter design, J472-01L-VB can achieve fast switching and optimize power conversion efficiency. In addition, in various portable devices and automation systems, its low on-resistance ensures efficient operation and reliability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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