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J438-VB Product details
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Product Introduction
The J438-VB is a highly efficient P-channel MOSFET in a TO220F package designed for medium power and low voltage applications. Its maximum drain-source voltage (VDS) is -60V, making it suitable for operation in a negative voltage environment. The device has an on-resistance of 120mΩ and 100mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring good thermal management and high efficiency under a variety of operating conditions.
The J438-VB is a highly efficient P-channel MOSFET in a TO220F package designed for medium power and low voltage applications. Its maximum drain-source voltage (VDS) is -60V, making it suitable for operation in a negative voltage environment. The device has an on-resistance of 120mΩ and 100mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring good thermal management and high efficiency under a variety of operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 120mΩ @ VGS=4.5V
- **RDS(ON)**: 100mΩ @ VGS=10V
- **ID**: -20A
- **Technology**: Trench
- **Package**: TO220F
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 120mΩ @ VGS=4.5V
- **RDS(ON)**: 100mΩ @ VGS=10V
- **ID**: -20A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J438-VB is widely used in power management, switching power supply and motor drive. In power management modules, this MOSFET is suitable for DC-DC converters to provide stable output voltage and improve system efficiency. In switching power supply design, J438-VB can achieve fast switching and optimize overall energy efficiency. In addition, in motor drive applications, it can effectively control current and is suitable for power tools and automation equipment to ensure reliable performance under different load conditions.
J438-VB is widely used in power management, switching power supply and motor drive. In power management modules, this MOSFET is suitable for DC-DC converters to provide stable output voltage and improve system efficiency. In switching power supply design, J438-VB can achieve fast switching and optimize overall energy efficiency. In addition, in motor drive applications, it can effectively control current and is suitable for power tools and automation equipment to ensure reliable performance under different load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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