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J418-VB Product details
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Product Introduction
**J418-VB** is a high-performance P-channel MOSFET in TO252 package, designed for medium and low voltage and high current applications. The device has excellent conduction performance and extremely low on-resistance, and is particularly suitable for power management and switching applications. It can perform excellently in various environments with high requirements for power and efficiency.
**J418-VB** is a high-performance P-channel MOSFET in TO252 package, designed for medium and low voltage and high current applications. The device has excellent conduction performance and extremely low on-resistance, and is particularly suitable for power management and switching applications. It can perform excellently in various environments with high requirements for power and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **VDS**: -30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **RDS(ON)**:
- 46mΩ (@VGS=4.5V)
- 33mΩ (@VGS=10V)
- **ID**: -38A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **VDS**: -30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **RDS(ON)**:
- 46mΩ (@VGS=4.5V)
- 33mΩ (@VGS=10V)
- **ID**: -38A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J418-VB is widely used in power management systems, such as switching power supplies, DC-DC converters, and battery management solutions. Its low on-resistance makes it excellent in improving system energy efficiency and effectively reducing heat loss. In addition, this MOSFET is also well used in consumer electronics, automotive electronics, and industrial automation equipment, especially in situations requiring efficient power switching and high reliability. The excellent performance of J418-VB ensures system stability and long-term reliability to meet a variety of application requirements.
J418-VB is widely used in power management systems, such as switching power supplies, DC-DC converters, and battery management solutions. Its low on-resistance makes it excellent in improving system energy efficiency and effectively reducing heat loss. In addition, this MOSFET is also well used in consumer electronics, automotive electronics, and industrial automation equipment, especially in situations requiring efficient power switching and high reliability. The excellent performance of J418-VB ensures system stability and long-term reliability to meet a variety of application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
