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J409S-VB Product details
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Product Introduction
The J409S-VB is a highly efficient P-channel MOSFET in a TO263 package, designed for high power and low voltage applications. Its maximum drain-source voltage (VDS) is -100V, suitable for operation in a negative voltage environment. The device has an on-resistance of 50mΩ and 40mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring excellent thermal management and low power consumption under a variety of operating conditions.
The J409S-VB is a highly efficient P-channel MOSFET in a TO263 package, designed for high power and low voltage applications. Its maximum drain-source voltage (VDS) is -100V, suitable for operation in a negative voltage environment. The device has an on-resistance of 50mΩ and 40mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring excellent thermal management and low power consumption under a variety of operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS**: -100V
- **VGS**: ±20V
- **Vth**: -2V
- **RDS(ON)**: 50mΩ @ VGS=4.5V
- **RDS(ON)**: 40mΩ @ VGS=10V
- **ID**: -37A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS**: -100V
- **VGS**: ±20V
- **Vth**: -2V
- **RDS(ON)**: 50mΩ @ VGS=4.5V
- **RDS(ON)**: 40mΩ @ VGS=10V
- **ID**: -37A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J409S-VB is widely used in power management, switching power supplies and motor drives. In power management modules, this MOSFET is ideal for efficient DC-DC converters, ensuring stable output voltage and improving system efficiency. In switching power supply designs, J409S-VB enables fast switching and optimizes overall energy efficiency. In motor drive applications, it can smoothly control current and is suitable for various power tools and automation equipment, ensuring efficient operation and reliable performance under different load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
