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J400-VB Product details

Product introduction:

Product Introduction
J400-VB is a high-efficiency P-channel MOSFET with -30V VDS and ±20V VGS in TO263 package. The device uses Trench technology and has extremely low on-resistance (RDS(ON) is 11mΩ@VGS=4.5V and 8mΩ@VGS=10V), and can support currents up to -75A, making it very suitable for high-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -30V -2.5V -75A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -30V -2.5V -75A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -30V -2.5V -75A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
Parameter description
- **Model**: J400-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -2.5V
- **RDS(ON)**: 11mΩ @ VGS=4.5V
- **RDS(ON)**: 8mΩ @ VGS=10V
- **ID**: -75A
- **Technology**: Trench

Domain and module applications:

Applications and modules
J400-VB is widely used in power management, load switching and DC-DC converters. It excels in electric vehicles, industrial automation and high-efficiency inverters, effectively controlling the flow of current. Due to its low on-resistance and high current handling capability, this MOSFET is particularly suitable for high-power and high-efficiency applications, ensuring system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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