J400-VB Product details
Product introduction:
J400-VB is a high-efficiency P-channel MOSFET with -30V VDS and ±20V VGS in TO263 package. The device uses Trench technology and has extremely low on-resistance (RDS(ON) is 11mΩ@VGS=4.5V and 8mΩ@VGS=10V), and can support currents up to -75A, making it very suitable for high-power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
- **Model**: J400-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -2.5V
- **RDS(ON)**: 11mΩ @ VGS=4.5V
- **RDS(ON)**: 8mΩ @ VGS=10V
- **ID**: -75A
- **Technology**: Trench
Domain and module applications:
J400-VB is widely used in power management, load switching and DC-DC converters. It excels in electric vehicles, industrial automation and high-efficiency inverters, effectively controlling the flow of current. Due to its low on-resistance and high current handling capability, this MOSFET is particularly suitable for high-power and high-efficiency applications, ensuring system stability and reliability.
Technical support:
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