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J387STL-E-VB Product details
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Product Introduction
J387STL-E-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is -20V, suitable for operation in low voltage environments. The device has an on-resistance of 25mΩ and 16mΩ at gate voltages of 2.5V and 4.5V respectively, ensuring excellent low power consumption and high efficiency in a variety of applications.
J387STL-E-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is -20V, suitable for operation in low voltage environments. The device has an on-resistance of 25mΩ and 16mΩ at gate voltages of 2.5V and 4.5V respectively, ensuring excellent low power consumption and high efficiency in a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -20V | -0.8V | -40A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -20V | -0.8V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -20V | -0.8V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -20V
- **VGS**: ±20V
- **Vth**: -0.8V
- **RDS(ON)**: 25mΩ @ VGS=2.5V
- **RDS(ON)**: 16mΩ @ VGS=4.5V
- **ID**: -40A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -20V
- **VGS**: ±20V
- **Vth**: -0.8V
- **RDS(ON)**: 25mΩ @ VGS=2.5V
- **RDS(ON)**: 16mΩ @ VGS=4.5V
- **ID**: -40A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J387STL-E-VB is widely used in power management, portable devices and motor drives. In power management modules, this MOSFET is ideal for efficient DC-DC converters, providing stable output voltage and improving system efficiency. In portable devices, J387STL-E-VB can effectively control current, ensuring efficient operation of the device and extending battery life. In addition, in motor drive applications, it can smoothly control current and is suitable for various power tools and household appliances to ensure reliable performance under different load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
