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J382-VB Product details

Product introduction:

Product Introduction
J382-VB is a high-performance P-channel MOSFET with -30V VDS and ±20V VGS in TO252 package. The device adopts Trench technology, provides excellent switching performance and low on-resistance (RDS(ON) is 46mΩ@VGS=4.5V and 33mΩ@VGS=10V), can support current up to -38A, and is particularly suitable for medium and high power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -30V -1.7V -38A 33mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Parameter description
- **Model**: J382-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench

Domain and module applications:

Applications and modules
J382-VB is widely used in power management, DC-DC converters and load switches. It performs well in battery management systems, electric vehicle drives and high-efficiency inverters to effectively control current flow. Due to its low on-resistance and high efficiency, this MOSFET is very suitable for applications that require efficient power conversion, ensuring system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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