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J350-VB Product details
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Product Introduction
The J350-VB is a highly efficient P-channel MOSFET in a TO220F package designed for high power and low voltage applications. Its maximum drain-source voltage (VDS) is -100V, making it suitable for operation in a negative voltage environment. The device has an on-resistance of 230mΩ and 200mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring good thermal management and low power consumption under a variety of operating conditions.
The J350-VB is a highly efficient P-channel MOSFET in a TO220F package designed for high power and low voltage applications. Its maximum drain-source voltage (VDS) is -100V, making it suitable for operation in a negative voltage environment. The device has an on-resistance of 230mΩ and 200mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring good thermal management and low power consumption under a variety of operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single P channel
- **VDS**: -100V
- **VGS**: ±20V
- **Vth**: -2V
- **RDS(ON)**: 230mΩ @ VGS=4.5V
- **RDS(ON)**: 200mΩ @ VGS=10V
- **ID**: -12A
- **Technology**: Trench
- **Package**: TO220F
- **Configuration**: Single P channel
- **VDS**: -100V
- **VGS**: ±20V
- **Vth**: -2V
- **RDS(ON)**: 230mΩ @ VGS=4.5V
- **RDS(ON)**: 200mΩ @ VGS=10V
- **ID**: -12A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J350-VB is widely used in power management, switching power supply and motor drive. In power management modules, this MOSFET is suitable for efficient DC-DC converters, providing stable output voltage and improving system efficiency. In switching power supply design, J350-VB can achieve fast switching and optimize overall energy efficiency. In addition, in motor drive applications, it can effectively control current and is suitable for various power tools and automation equipment to ensure efficient operation under different load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
