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J338-Z-VB Product details

Product introduction:

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J338-Z-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage applications. Its drain-source voltage (VDS) is as high as -150V and the maximum drain current (ID) is -15A, which is suitable for power management and switching circuits. This MOSFET has a reasonable on-resistance (RDS(ON) is 160mΩ@VGS=10V), which can effectively reduce energy consumption and heat when running at high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -150V -2V -15A 160mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -150V -2V -15A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -150V -2V -15A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
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- **Package:** TO252
- **Configuration:** Single P-channel
- **VDS:** -150V
- **VGS:** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 160mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** -15A
- **Technology:** Trench

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Domain and module applications:

Example: **
J338-Z-VB is widely used in high-voltage switching power supplies, DC-DC converters, load switches, etc. Its high voltage capability makes it very suitable for use in electric vehicle chargers, industrial automation equipment and high-voltage LED driver modules, ensuring reliability and efficiency under various working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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