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J337-Z-E2-VB Product details
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Product Introduction
The J337-Z-E2-VB is a high-efficiency P-channel MOSFET in a TO252 package, designed for low voltage and high power applications. Its maximum drain-source voltage (VDS) is -30V, suitable for operation in a negative voltage environment. The device has an on-resistance of 46mΩ and 33mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring excellent low power consumption and good thermal management performance under a variety of operating conditions.
The J337-Z-E2-VB is a high-efficiency P-channel MOSFET in a TO252 package, designed for low voltage and high power applications. Its maximum drain-source voltage (VDS) is -30V, suitable for operation in a negative voltage environment. The device has an on-resistance of 46mΩ and 33mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring excellent low power consumption and good thermal management performance under a variety of operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J337-Z-E2-VB is widely used in power management, switching power supplies and power tools. In power management modules, this MOSFET is very suitable for efficient DC-DC converters, ensuring stable output voltage and high efficiency. In switching power supply design, it can achieve fast switching and improve overall energy efficiency. In addition, in power tools and automation equipment, J337-Z-E2-VB can smoothly control current and is suitable for applications under various load conditions, ensuring efficient operation and response of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
