J333-VB Product details
Product introduction:
J333-VB is a high-performance P-channel MOSFET with -30V VDS and ±20V VGS in TO252 package. The device adopts Trench technology, provides excellent switching performance and low on-resistance (RDS(ON) is 46mΩ@VGS=4.5V and 33mΩ@VGS=10V), can support current up to -38A, and is very suitable for medium power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Model**: J333-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
Domain and module applications:
J333-VB is widely used in power management, DC-DC converters and load switches. It performs well in battery management systems, consumer electronics and high-efficiency inverters, effectively controlling the flow of current. Due to its low on-resistance and high efficiency, this MOSFET is particularly suitable for applications that require efficient power conversion, ensuring system stability and reliability.
Technical support:
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