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J327-Z-E2-VB Product details
Back to previous pageProduct introduction：
J327-Z-E2-VB is a high-efficiency single P-channel MOSFET in TO252 package, designed for medium voltage applications. With a drain-source voltage (VDS) of -60V and a maximum drain current (ID) of -30A, it is suitable for power management and switching circuits. The on-resistance of this MOSFET (RDS(ON) is 90mΩ@VGS=10V), it can significantly reduce energy consumption and heat generation, and improve overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package:** TO252
- **Configuration:** Single P-channel
- **VDS:** -60V
- **VGS:** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 100mΩ (at VGS=4.5V)
- 90mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** -30A
- **Technology:** Trench
Domain and module applications：
Example:
J327-Z-E2-VB is widely used in switching power supplies, load switches, DC-DC converters, etc. Its strong current handling capability and low on-resistance make it suitable for battery management systems, LED drive circuits, and automotive electronic devices, ensuring reliability and efficiency in a variety of application scenarios.
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