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J319STR-VB Product details
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J319STR-VB Product Introduction
J319STR-VB is a high-performance unipolar P-type MOSFET in TO252 package, designed for high voltage applications, capable of withstanding drain-source voltages up to -200V. The device uses Trench technology, has excellent electrical characteristics and thermal management capabilities, and is suitable for a variety of high-voltage electronic devices. With its moderate on-resistance and good current carrying capacity, J319STR-VB can be widely used in power management and industrial control fields to ensure stable operation in harsh environments.
J319STR-VB is a high-performance unipolar P-type MOSFET in TO252 package, designed for high voltage applications, capable of withstanding drain-source voltages up to -200V. The device uses Trench technology, has excellent electrical characteristics and thermal management capabilities, and is suitable for a variety of high-voltage electronic devices. With its moderate on-resistance and good current carrying capacity, J319STR-VB can be widely used in power management and industrial control fields to ensure stable operation in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: J319STR-VB
- **Package**: TO252
- **Configuration**: Unipolar P-type
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -3.6A
- **Technology**: Trench
- **Model**: J319STR-VB
- **Package**: TO252
- **Configuration**: Unipolar P-type
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -3.6A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J319STR-VB demonstrates its excellent applicability in multiple fields. First, in power management, this MOSFET is suitable for high-voltage switching power supplies and DC-DC converters, and can provide stable current output under high-voltage operating conditions to ensure the efficiency and reliability of the system. Secondly, as a load switch, J319STR-VB can be used in industrial automation and control systems, which can switch quickly to control the flow of current and improve the response speed and flexibility of the equipment. In addition, the device also performs well in motor drives and high-power applications, suitable for operation in high-voltage environments, ensuring stable performance and signal quality. These features make J319STR-VB an ideal choice for design engineers.
J319STR-VB demonstrates its excellent applicability in multiple fields. First, in power management, this MOSFET is suitable for high-voltage switching power supplies and DC-DC converters, and can provide stable current output under high-voltage operating conditions to ensure the efficiency and reliability of the system. Secondly, as a load switch, J319STR-VB can be used in industrial automation and control systems, which can switch quickly to control the flow of current and improve the response speed and flexibility of the equipment. In addition, the device also performs well in motor drives and high-power applications, suitable for operation in high-voltage environments, ensuring stable performance and signal quality. These features make J319STR-VB an ideal choice for design engineers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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