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J275-VB Product details

Product introduction:

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J275-VB is a high-efficiency single P-channel MOSFET in TO263 package, designed for high voltage applications. With a drain-source voltage (VDS) up to -100V and a maximum drain current (ID) of -12A, it is suitable for various power management and switching circuits. The on-resistance of this MOSFET (RDS(ON) is 200mΩ@VGS=10V), ensuring high efficiency operation, which helps reduce energy consumption and heat generation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -100V -2V -12A 200mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -100V -2V -12A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -100V -2V -12A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
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- **Package:** TO263
- **Configuration:** Single P-channel
- **VDS:** -100V
- **VGS:** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 240mΩ (at VGS=4.5V)
- 200mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** -12A
- **Technology:** Trench

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Domain and module applications:

Example: **
J275-VB is widely used in high voltage power supply, DC-DC converter and load switch. Its high current handling capability makes it suitable for modules such as electric vehicle chargers, industrial automation equipment and solar inverters, ensuring reliability and high efficiency under various working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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