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J268-VB Product details
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Product Introduction
J268-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high power applications. Its maximum drain-source voltage (VDS) is -60V, suitable for various negative voltage operating environments. The device's on-resistance is 77mΩ and 64mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring low power consumption and excellent thermal performance in different applications.
J268-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high power applications. Its maximum drain-source voltage (VDS) is -60V, suitable for various negative voltage operating environments. The device's on-resistance is 77mΩ and 64mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring low power consumption and excellent thermal performance in different applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 77mΩ @ VGS=4.5V
- **RDS(ON)**: 64mΩ @ VGS=10V
- **ID**: -30A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single P channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 77mΩ @ VGS=4.5V
- **RDS(ON)**: 64mΩ @ VGS=10V
- **ID**: -30A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J268-VB is widely used in power management, switching power supplies and motor drives. In power management systems, this MOSFET is suitable for efficient DC-DC converters, providing stable output voltage and high efficiency. In switching power supply design, J268-VB can achieve fast switching and improve overall energy efficiency. In addition, in motor drive applications, it can smoothly control current and is suitable for various power tools and automation equipment to ensure a balance between performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
