中文
English
J259-VB Product details
Back to previous pageProduct introduction：
J259-VB Product Introduction
J259-VB is a high-efficiency unipolar P-type MOSFET in TO263 package, designed for high current and high power applications. It supports drain-source voltage up to -30V, making the device outstanding in power management and load switching. With ultra-low on-resistance, J259-VB can effectively reduce energy loss and improve thermal management performance, making it suitable for use in demanding electronic equipment.
J259-VB is a high-efficiency unipolar P-type MOSFET in TO263 package, designed for high current and high power applications. It supports drain-source voltage up to -30V, making the device outstanding in power management and load switching. With ultra-low on-resistance, J259-VB can effectively reduce energy loss and improve thermal management performance, making it suitable for use in demanding electronic equipment.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: J259-VB
- **Package**: TO263
- **Configuration**: Unipolar P-type
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -75A
- **Technology**: Trench
- **Model**: J259-VB
- **Package**: TO263
- **Configuration**: Unipolar P-type
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -75A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The J259-VB demonstrates its excellent applicability in multiple fields. First, in power management, this MOSFET is very suitable for switching power supplies and DC-DC converters, providing stable current output under high load, improving system efficiency and reducing power consumption. Secondly, as a load switch, the J259-VB can be widely used in various home appliances and industrial equipment, ensuring fast switching to control the flow of current, thereby enhancing the flexibility and reliability of the system. In addition, the device performs well in high-power applications such as motor drives and high-power amplifiers, supporting high-current operation and maintaining stable signal quality. These features make the J259-VB an important choice in the field of electronic design.
The J259-VB demonstrates its excellent applicability in multiple fields. First, in power management, this MOSFET is very suitable for switching power supplies and DC-DC converters, providing stable current output under high load, improving system efficiency and reducing power consumption. Secondly, as a load switch, the J259-VB can be widely used in various home appliances and industrial equipment, ensuring fast switching to control the flow of current, thereby enhancing the flexibility and reliability of the system. In addition, the device performs well in high-power applications such as motor drives and high-power amplifiers, supporting high-current operation and maintaining stable signal quality. These features make the J259-VB an important choice in the field of electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
