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J246STR-VB Product details
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Product Introduction
J246STR-VB is a high-efficiency P-channel MOSFET with -30V VDS and ±20V VGS in TO252 package. The device adopts Trench technology, has low on-resistance (RDS(ON) is 46mΩ@VGS=4.5V and 33mΩ@VGS=10V), can support current up to -38A, and is very suitable for medium power applications, providing excellent switching performance and energy efficiency.
J246STR-VB is a high-efficiency P-channel MOSFET with -30V VDS and ±20V VGS in TO252 package. The device adopts Trench technology, has low on-resistance (RDS(ON) is 46mΩ@VGS=4.5V and 33mΩ@VGS=10V), can support current up to -38A, and is very suitable for medium power applications, providing excellent switching performance and energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Parameter description
- **Model**: J246STR-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
- **Model**: J246STR-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J246STR-VB is widely used in power management, DC-DC converters and load switches. It excels in battery management systems, consumer electronics and electric vehicle charging equipment, effectively controlling the flow of current. Due to its low on-resistance and high efficiency, this MOSFET is suitable for applications that require efficient power conversion, ensuring system stability and reliability.
J246STR-VB is widely used in power management, DC-DC converters and load switches. It excels in battery management systems, consumer electronics and electric vehicle charging equipment, effectively controlling the flow of current. Due to its low on-resistance and high efficiency, this MOSFET is suitable for applications that require efficient power conversion, ensuring system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
