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J245S-VB Product details
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J245S-VB Product Introduction
The J245S-VB is a high-performance unipolar P-type MOSFET in a TO252 package, designed for applications requiring high power and high efficiency. The device has a wide range of drain-source voltage and gate-source voltage, and can operate stably at drain voltages up to -60V. With its excellent on-resistance, the J245S-VB is well suited for power management, load switching and high-frequency applications, reducing energy loss while improving overall system reliability and performance.
The J245S-VB is a high-performance unipolar P-type MOSFET in a TO252 package, designed for applications requiring high power and high efficiency. The device has a wide range of drain-source voltage and gate-source voltage, and can operate stably at drain voltages up to -60V. With its excellent on-resistance, the J245S-VB is well suited for power management, load switching and high-frequency applications, reducing energy loss while improving overall system reliability and performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 61mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: J245S-VB
- **Package**: TO252
- **Configuration**: Unipolar P type
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 72mΩ @ VGS = 4.5V
- 61mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -30A
- **Technology**: Trench
- **Model**: J245S-VB
- **Package**: TO252
- **Configuration**: Unipolar P type
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 72mΩ @ VGS = 4.5V
- 61mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: J245S-VB is suitable for switching power supplies and DC-DC converters, providing stable power conversion under high voltage conditions, helping to improve system efficiency and reduce heat generation.
2. **Load switch**: This MOSFET is very suitable for load switch applications, capable of fast turn-on and turn-off under high load conditions, and is widely used in portable devices and industrial control systems.
3. **High frequency applications**: The low RDS(ON) characteristics of J245S-VB make it excellent in high frequency signal conditioning, suitable for RF amplifiers and radio frequency circuits, providing good signal integrity and stability.
Through these application examples, J245S-VB demonstrates its flexibility and reliability in high power and high efficiency requirements, making it an ideal choice in the field of electronic design.
1. **Power management**: J245S-VB is suitable for switching power supplies and DC-DC converters, providing stable power conversion under high voltage conditions, helping to improve system efficiency and reduce heat generation.
2. **Load switch**: This MOSFET is very suitable for load switch applications, capable of fast turn-on and turn-off under high load conditions, and is widely used in portable devices and industrial control systems.
3. **High frequency applications**: The low RDS(ON) characteristics of J245S-VB make it excellent in high frequency signal conditioning, suitable for RF amplifiers and radio frequency circuits, providing good signal integrity and stability.
Through these application examples, J245S-VB demonstrates its flexibility and reliability in high power and high efficiency requirements, making it an ideal choice in the field of electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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