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J222-VB Product details

Product introduction:

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J222-VB is a high-efficiency single P-channel MOSFET in TO220F package, designed for high voltage applications. With a drain-source voltage (VDS) of -100V and a maximum drain current (ID) of -23A, it is suitable for a variety of power management and switching applications. The on-resistance of this MOSFET (RDS(ON) of 100mΩ@VGS=10V) keeps the loss low under high power conditions, helping to improve system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-P -100V -2V -23A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-P -100V -2V -23A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-P -100V -2V -23A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-P
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- **Package:** TO220F
- **Configuration:** Single P-channel
- **VDS:** -100V
- **VGS:** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 120mΩ (at VGS=4.5V)
- 100mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** -23A
- **Technology:** Trench

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Domain and module applications:

Example: **
J222-VB is widely used in power management systems, load switches and DC-DC converters. Due to its high voltage and current capabilities, it is suitable for use in modules such as electric vehicle chargers, industrial equipment and solar inverters, ensuring reliability and efficiency under high loads and harsh conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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