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J217-VB Product details
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Product Introduction
J217-VB is a high-performance P-channel MOSFET with -60V VDS and ±20V VGS in TO3P package. The device adopts Trench technology, has extremely low on-resistance (RDS(ON) is 20mΩ@VGS=4.5V and 16mΩ@VGS=10V), can support current up to -53A, and is suitable for power management and switching applications requiring high efficiency and high reliability.
J217-VB is a high-performance P-channel MOSFET with -60V VDS and ±20V VGS in TO3P package. The device adopts Trench technology, has extremely low on-resistance (RDS(ON) is 20mΩ@VGS=4.5V and 16mΩ@VGS=10V), can support current up to -53A, and is suitable for power management and switching applications requiring high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-P | -60V | -1.7V | -53A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-P | -60V | -1.7V | -53A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-P | -60V | -1.7V | -53A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-P |
Parameter description
- **Model**: J217-VB
- **Package**: TO3P
- **Configuration**: Single P-channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 20mΩ @ VGS=4.5V
- **RDS(ON)**: 16mΩ @ VGS=10V
- **ID**: -53A
- **Technology**: Trench
- **Model**: J217-VB
- **Package**: TO3P
- **Configuration**: Single P-channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 20mΩ @ VGS=4.5V
- **RDS(ON)**: 16mΩ @ VGS=10V
- **ID**: -53A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J217-VB is widely used in power management systems, DC-DC converters and electric vehicle drive systems. It performs well in high-efficiency load switches, battery management systems and high-voltage inverters, and can stably control the flow of large currents. With its extremely low on-resistance and excellent thermal performance, this MOSFET is very suitable for high-efficiency power conversion and energy management applications, ensuring system reliability and stability.
J217-VB is widely used in power management systems, DC-DC converters and electric vehicle drive systems. It performs well in high-efficiency load switches, battery management systems and high-voltage inverters, and can stably control the flow of large currents. With its extremely low on-resistance and excellent thermal performance, this MOSFET is very suitable for high-efficiency power conversion and energy management applications, ensuring system reliability and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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