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J199-VB Product details

Product introduction:

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J195-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage applications. Its drain-source voltage (VDS) can reach -100V and the maximum drain current (ID) is -8.8A, which is very suitable for power management and switching applications. The on-resistance of this MOSFET (RDS(ON) is 250mΩ@VGS=10V) can still maintain low power consumption in high voltage environment, thereby improving system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-P -100V -2V -3A 200mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-P -100V -2V -3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-P -100V -2V -3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-P
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- **Package:** TO252
- **Configuration:** Single P-channel
- **VDS:** -100V
- **VGS:** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 280mΩ (at VGS=4.5V)
- 250mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** -8.8A
- **Technology:** Trench

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Domain and module applications:

Example: **
J195-VB is widely used in high voltage power supplies, load switches and DC-DC converters. Its high voltage tolerance makes it very suitable for solar inverters, electric vehicle chargers and industrial power management modules, ensuring stability and efficiency under high voltage and high current conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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