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J193-VB Product details
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Product Introduction
J193-VB is a high-performance P-channel MOSFET in SOT89 package, designed for low voltage and high efficiency applications. Its maximum drain-source voltage (VDS) is -100V, suitable for operation in negative voltage environments. The device's on-resistance is 230mΩ and 200mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring low power consumption and excellent performance under various load conditions.
J193-VB is a high-performance P-channel MOSFET in SOT89 package, designed for low voltage and high efficiency applications. Its maximum drain-source voltage (VDS) is -100V, suitable for operation in negative voltage environments. The device's on-resistance is 230mΩ and 200mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring low power consumption and excellent performance under various load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -100V | -2V | -3A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -100V | -2V | -3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -100V | -2V | -3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
Detailed parameter description
- **Package**: SOT89
- **Configuration**: Single P channel
- **VDS**: -100V
- **VGS**: ±20V
- **Vth**: -2V
- **RDS(ON)**: 230mΩ @ VGS=4.5V
- **RDS(ON)**: 200mΩ @ VGS=10V
- **ID**: -3A
- **Technology**: Trench
- **Package**: SOT89
- **Configuration**: Single P channel
- **VDS**: -100V
- **VGS**: ±20V
- **Vth**: -2V
- **RDS(ON)**: 230mΩ @ VGS=4.5V
- **RDS(ON)**: 200mΩ @ VGS=10V
- **ID**: -3A
- **Technology**: Trench
Domain and module applications：
Applications and modules
J193-VB is widely used in power management, switching power supply and signal conditioning. In power management modules, this MOSFET can be used in efficient DC-DC converters to ensure stable output voltage. In switching power supply design, J193-VB can achieve fast switching and improve conversion efficiency. In addition, it is also suitable for signal conditioning circuits and used as a switching element in various consumer electronics and low-power devices to ensure overall performance and energy efficiency.
J193-VB is widely used in power management, switching power supply and signal conditioning. In power management modules, this MOSFET can be used in efficient DC-DC converters to ensure stable output voltage. In switching power supply design, J193-VB can achieve fast switching and improve conversion efficiency. In addition, it is also suitable for signal conditioning circuits and used as a switching element in various consumer electronics and low-power devices to ensure overall performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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