J18TR-VB Product details
Product introduction:
J18TR-VB is a high-performance P-channel MOSFET with -60V VDS and ±20V VGS in TO252 package. The device adopts Trench technology, has low on-resistance (RDS(ON) is 100mΩ@VGS=4.5V and 90mΩ@VGS=10V), is suitable for medium current applications, can provide excellent switching characteristics and high efficiency, and is particularly suitable for power management and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Parameter description
- **Model**: J18TR-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 100mΩ @ VGS=4.5V
- **RDS(ON)**: 90mΩ @ VGS=10V
- **ID**: -30A
- **Technology**: Trench
Domain and module applications:
Applications and modules
J18TR-VB is widely used in power management, DC-DC converters and electric vehicle drive systems. It performs well in load switches, battery management systems and high-efficiency inverters, and can stably control high current flows. Due to its low on-resistance and good thermal performance, this MOSFET is very suitable for applications in efficient power conversion and energy management, ensuring system reliability and stability.
Technical support:
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