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J188-TL-VB Product details

Product introduction:

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J188-TL-VB is a high-performance single P-channel MOSFET in TO252 package, designed for medium and low voltage applications. Its drain-source voltage (VDS) is -30V and the maximum drain current (ID) is -38A, which is very suitable for power management and switch control. This MOSFET has a low on-resistance (RDS(ON) is 33mΩ@VGS=10V), which can effectively reduce power consumption and improve system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -30V -1.7V -38A 33mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
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- **Package:** TO252
- **Configuration:** Single P-channel
- **VDS:** -30V
- **VGS:** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 46mΩ (at VGS=4.5V)
- 33mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** -38A
- **Technology:** Trench

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Domain and module applications:

Example: **
J188-TL-VB is widely used in switching power supplies, DC-DC converters and load switches. Its excellent current handling capability makes it particularly suitable for use in power management modules for portable electronic devices, electric vehicle chargers and smart home devices, ensuring stability and efficient operation under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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