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J132-Z-T1-VB Product details
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Product Introduction
J132-Z-T1-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage and high efficiency applications. Its maximum drain-source voltage (VDS) is -30V, suitable for a variety of negative voltage applications. The device has an on-resistance of 46mΩ and 33mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring low power consumption and superior performance under multiple operating conditions.
J132-Z-T1-VB is a high-performance P-channel MOSFET in TO252 package, designed for low voltage and high efficiency applications. Its maximum drain-source voltage (VDS) is -30V, suitable for a variety of negative voltage applications. The device has an on-resistance of 46mΩ and 33mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring low power consumption and superior performance under multiple operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -30V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 46mΩ @ VGS=4.5V
- **RDS(ON)**: 33mΩ @ VGS=10V
- **ID**: -38A
- **Technology**: Trench
Domain and module applications：
Applications and modules: J132-Z-T1-VB is widely used in power management, DC-DC converters and motor drives. In power management modules, it can effectively control power output and is suitable for efficient DC-DC converters. In motor drive applications, this MOSFET can respond quickly and is suitable for driving various types of motors to improve the performance and response speed of the equipment. In addition, in consumer electronics, J132-Z-T1-VB can be used to protect circuits and switching power supplies to achieve higher energy efficiency and more stable working performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
