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J132-VB Product details
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J132-VB Product Introduction
J132-VB is a high-efficiency P-channel MOSFET in TO252 package, designed for medium and low voltage applications. The device has a drain-source voltage (VDS) of -30V, which is suitable for negative voltage environments. Its gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is -1.7V, which allows it to operate normally under relatively low drive voltages. Using Trench technology, it provides low on-resistance (RDS(ON) = 46mΩ @ VGS=4.5V and 33mΩ @ VGS=10V), which enables it to consume less power when operating under high current conditions, thereby improving overall efficiency.
J132-VB is a high-efficiency P-channel MOSFET in TO252 package, designed for medium and low voltage applications. The device has a drain-source voltage (VDS) of -30V, which is suitable for negative voltage environments. Its gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is -1.7V, which allows it to operate normally under relatively low drive voltages. Using Trench technology, it provides low on-resistance (RDS(ON) = 46mΩ @ VGS=4.5V and 33mΩ @ VGS=10V), which enables it to consume less power when operating under high current conditions, thereby improving overall efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: J132-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -38A
- **Technology**: Trench
- **Model**: J132-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -38A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Negative Power Switch**: J132-VB can be used in negative power switch circuits for applications that require negative voltage control, such as audio amplifiers and efficient power management systems.
2. **H-bridge Motor Drive**: In motor drive applications, this MOSFET can be used as a switch in the H-bridge to support positive and negative current control of the motor, providing smooth motor operation.
3. **Power Converter**: In DC-DC converters, J132-VB can efficiently handle negative voltages and is suitable for a variety of power conversion devices, including solar inverters.
4. **Battery Management System**: In battery management applications, this device can be used to control the battery charging and discharging process to ensure safe and efficient energy transfer.
5. **LED Drive Circuit**: In LED lighting applications, J132-VB can be used for negative power drive to ensure high efficiency and reliability of LED modules to meet the market demand for high-brightness lighting.
The above is the product introduction of J132-VB, detailed parameter description and examples of its applicable fields. If you need more information or specific application cases, please feel free to let us know!
1. **Negative Power Switch**: J132-VB can be used in negative power switch circuits for applications that require negative voltage control, such as audio amplifiers and efficient power management systems.
2. **H-bridge Motor Drive**: In motor drive applications, this MOSFET can be used as a switch in the H-bridge to support positive and negative current control of the motor, providing smooth motor operation.
3. **Power Converter**: In DC-DC converters, J132-VB can efficiently handle negative voltages and is suitable for a variety of power conversion devices, including solar inverters.
4. **Battery Management System**: In battery management applications, this device can be used to control the battery charging and discharging process to ensure safe and efficient energy transfer.
5. **LED Drive Circuit**: In LED lighting applications, J132-VB can be used for negative power drive to ensure high efficiency and reliability of LED modules to meet the market demand for high-brightness lighting.
The above is the product introduction of J132-VB, detailed parameter description and examples of its applicable fields. If you need more information or specific application cases, please feel free to let us know!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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