中文
English
J130-VB Product details
Back to previous pageProduct introduction：
Product Introduction
J130-VB is a high voltage P-channel MOSFET with -500V VDS and ±20V VGS in TO252 package. This device uses Plannar technology and despite its high on-resistance (RDS(ON) of 4875mΩ@VGS=4.5V and 3900mΩ@VGS=10V), it still provides reliable performance in high voltage applications and is suitable for power control and switching applications.
J130-VB is a high voltage P-channel MOSFET with -500V VDS and ±20V VGS in TO252 package. This device uses Plannar technology and despite its high on-resistance (RDS(ON) of 4875mΩ@VGS=4.5V and 3900mΩ@VGS=10V), it still provides reliable performance in high voltage applications and is suitable for power control and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Parameter description
- **Model**: J130-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -500V
- **VGS**: ±20V
- **Vth**: -3V
- **RDS(ON)**: 4875mΩ @ VGS=4.5V
- **RDS(ON)**: 3900mΩ @ VGS=10V
- **ID**: -2A
- **Technology**: Plannar
- **Model**: J130-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -500V
- **VGS**: ±20V
- **Vth**: -3V
- **RDS(ON)**: 4875mΩ @ VGS=4.5V
- **RDS(ON)**: 3900mΩ @ VGS=10V
- **ID**: -2A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
J130-VB is widely used in modules such as high voltage power converters, DC-DC converters and inverters. It is particularly important in power electronic equipment, high voltage switching power supplies and industrial automation, and can work stably in high voltage environments. This MOSFET is suitable for electrical drives and power management systems, providing efficient power control and conversion capabilities.
J130-VB is widely used in modules such as high voltage power converters, DC-DC converters and inverters. It is particularly important in power electronic equipment, high voltage switching power supplies and industrial automation, and can work stably in high voltage environments. This MOSFET is suitable for electrical drives and power management systems, providing efficient power control and conversion capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
