IXTY64N055T-VB Product details
Product introduction:
IXTY64N055T-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for medium voltage applications. Its drain-source voltage (VDS) is 60V and the maximum drain current (ID) can reach 58A. This MOSFET has an extremely low on-resistance (RDS(ON) of 13mΩ@VGS=4.5V and 10mΩ@VGS=10V), which can effectively reduce power consumption and improve system efficiency, especially suitable for use under high load conditions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package:** TO252
- **Configuration:** Single N-channel
- **VDS:** 60V
- **VGS:** ±20V
- **Threshold voltage (Vth):** 2.5V
- **On-resistance (RDS(ON)):** 13mΩ (at VGS=4.5V), 10mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** 58A
- **Technology:** Trench
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Domain and module applications:
IXTY64N055T-VB is widely used in power management, DC-DC converters and motor drives. Its excellent current handling capability and low power consumption make it very suitable for use in electric vehicles, renewable energy systems (such as solar inverters) and various high-performance electronic devices to ensure system stability and efficient operation.
Technical support:
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