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IXTY5N50P-VB Product details
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Product Introduction
IXTY5N50P-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. With a drain-source voltage (VDS) of 650V and a maximum continuous current of 5A, the device is optimized for low conduction losses and high reliability, suitable for use in demanding power electronics environments.
IXTY5N50P-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. With a drain-source voltage (VDS) of 650V and a maximum continuous current of 5A, the device is optimized for low conduction losses and high reliability, suitable for use in demanding power electronics environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IXTU5N50P-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTU5N50P-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
IXTY5N50P-VB is widely used in many fields, including:
1. **Switching power supply**: As a switching element in high-voltage DC-DC converters, it ensures efficient energy conversion and stable output.
2. **Electric vehicles**: In the power management system of electric vehicles, it is used for high-voltage drive and energy transfer to improve overall efficiency.
3. **Industrial control**: In industrial automation equipment, it provides reliable current control and is suitable for motor drive and power management.
4. **Lighting system**: In LED drive circuits, it is responsible for efficient power control to optimize the performance and energy efficiency of lighting systems.
IXTY5N50P-VB is widely used in many fields, including:
1. **Switching power supply**: As a switching element in high-voltage DC-DC converters, it ensures efficient energy conversion and stable output.
2. **Electric vehicles**: In the power management system of electric vehicles, it is used for high-voltage drive and energy transfer to improve overall efficiency.
3. **Industrial control**: In industrial automation equipment, it provides reliable current control and is suitable for motor drive and power management.
4. **Lighting system**: In LED drive circuits, it is responsible for efficient power control to optimize the performance and energy efficiency of lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
