IXTY50N085T-VB Product details
Product introduction:
IXTY50N085T-VB is a high-efficiency N-channel MOSFET in a TO252 package designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 80V, suitable for a variety of power management and switching applications. The device has an on-resistance of only 5mΩ@VGS=10V, making it outstanding in terms of high efficiency and low heat dissipation.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 80V
- **VGS**: ±20V
- **Vth**: 3V
- **RDS(ON)**: 5mΩ @ VGS=10V
- **ID**: 75A
- **Technology**: Trench
Domain and module applications:
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