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IXTY32P05T-VB Product details

Product introduction:

Product Introduction
IXTY32P05T-VB is a high-performance P-channel MOSFET with -60V VDS and ±20V VGS in TO252 package. The device uses Trench technology and has low on-resistance (RDS(ON) is 25mΩ@VGS=4.5V and 20mΩ@VGS=10V), making it excellent in high current applications and suitable for a variety of power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -50A 20mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Parameter description
- **Model**: IXTY32P05T-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 25mΩ @ VGS=4.5V
- **RDS(ON)**: 20mΩ @ VGS=10V
- **ID**: -50A
- **Technology**: Trench

Domain and module applications:

Applications and modules
IXTY32P05T-VB is widely used in power management, DC-DC converters and electric vehicle drive systems. It performs well in load switches, battery management systems and power regulation modules, and can effectively control high current flows. Due to its high efficiency and low on-resistance, this MOSFET is very suitable for applications that require efficient power conversion, ensuring system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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