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IXTY2N80P-VB Product details
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Product Introduction
IXTY2N80P-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. Its high voltage withstand capability up to 800V and good conduction characteristics make it an ideal choice for working in harsh environments. Based on SJ_Multi-EPI technology, this device can effectively meet the needs of high-efficiency power supplies and electronic equipment.
IXTY2N80P-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. Its high voltage withstand capability up to 800V and good conduction characteristics make it an ideal choice for working in harsh environments. Based on SJ_Multi-EPI technology, this device can effectively meet the needs of high-efficiency power supplies and electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **VDS**: 800V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2600mΩ (@VGS=10V)
- **ID**: 2A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **VDS**: 800V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2600mΩ (@VGS=10V)
- **ID**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
IXTY2N80P-VB is suitable for applications such as power converters, switching power supplies, and high-voltage inverters. Due to its high withstand voltage characteristics, this MOSFET performs well in protection circuits of electrical equipment, industrial automation equipment, and power conversion systems. In addition, it can also be used in high-voltage drive circuits and home appliances to ensure the safety and stability of the system. In these applications, IXTY2N80P-VB can effectively improve energy efficiency, reduce heat loss, and enhance equipment reliability.
IXTY2N80P-VB is suitable for applications such as power converters, switching power supplies, and high-voltage inverters. Due to its high withstand voltage characteristics, this MOSFET performs well in protection circuits of electrical equipment, industrial automation equipment, and power conversion systems. In addition, it can also be used in high-voltage drive circuits and home appliances to ensure the safety and stability of the system. In these applications, IXTY2N80P-VB can effectively improve energy efficiency, reduce heat loss, and enhance equipment reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
