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IXTY26P10T-VB Product details
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Product Introduction: IXTY26P10T-VB
IXTY26P10T-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage and high current applications. This MOSFET adopts Trench technology, has low on-resistance and fast switching characteristics, and is very suitable for various power management and load control scenarios. Its superior performance makes IXTY26P10T-VB an important component in modern electronic design, which can effectively improve the efficiency and stability of the system.
IXTY26P10T-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage and high current applications. This MOSFET adopts Trench technology, has low on-resistance and fast switching characteristics, and is very suitable for various power management and load control scenarios. Its superior performance makes IXTY26P10T-VB an important component in modern electronic design, which can effectively improve the efficiency and stability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description:
- **Model**: IXTY26P10T-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ (at VGS=4.5V)
- 33mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -40A
- **Technology type**: Trench technology
- **Model**: IXTY26P10T-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ (at VGS=4.5V)
- 33mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -40A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples:
1. **Power switch**:
IXTY26P10T-VB is very suitable for high-side switch applications in switch mode power supplies (SMPS). Its low on-resistance enables it to improve power efficiency and reduce heat generation. It is widely used in consumer electronics and industrial power modules.
2. **Electric vehicle**:
In the battery management system and motor drive of electric vehicles, this MOSFET can effectively control the current flow, improve the overall performance and safety of the system, and ensure the stable operation of electric vehicles under different working conditions.
3. **Inverter**:
IXTY26P10T-VB is also suitable for photovoltaic inverters and UPS (uninterruptible power supply) systems, which can provide reliable power conversion and management, ensuring stability and high efficiency under high load conditions.
4. **Industrial control**:
This MOSFET is widely used in load control and motor drive in industrial automation and control systems, which can effectively improve the response speed and energy efficiency of the system and meet the needs of industrial applications for high-performance components.
Through these application examples, IXTY26P10T-VB demonstrates its wide applicability in high voltage and high current application scenarios, meeting the stringent requirements of modern electronic devices for performance and efficiency.
1. **Power switch**:
IXTY26P10T-VB is very suitable for high-side switch applications in switch mode power supplies (SMPS). Its low on-resistance enables it to improve power efficiency and reduce heat generation. It is widely used in consumer electronics and industrial power modules.
2. **Electric vehicle**:
In the battery management system and motor drive of electric vehicles, this MOSFET can effectively control the current flow, improve the overall performance and safety of the system, and ensure the stable operation of electric vehicles under different working conditions.
3. **Inverter**:
IXTY26P10T-VB is also suitable for photovoltaic inverters and UPS (uninterruptible power supply) systems, which can provide reliable power conversion and management, ensuring stability and high efficiency under high load conditions.
4. **Industrial control**:
This MOSFET is widely used in load control and motor drive in industrial automation and control systems, which can effectively improve the response speed and energy efficiency of the system and meet the needs of industrial applications for high-performance components.
Through these application examples, IXTY26P10T-VB demonstrates its wide applicability in high voltage and high current application scenarios, meeting the stringent requirements of modern electronic devices for performance and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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