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IXTY1R6N50D2-VB Product details
Back to previous pageProduct introduction：
：**
IXTY1R6N50D2-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. With a drain-source voltage (VDS) of up to 650V and a maximum drain current (ID) of 5A, it is very suitable for high voltage power supplies and inverter applications. Although its on-resistance (RDS(ON) is 1000mΩ@VGS=10V) is high, its design ensures stability and reliability in high voltage environments.
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IXTY1R6N50D2-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. With a drain-source voltage (VDS) of up to 650V and a maximum drain current (ID) of 5A, it is very suitable for high voltage power supplies and inverter applications. Although its on-resistance (RDS(ON) is 1000mΩ@VGS=10V) is high, its design ensures stability and reliability in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
：**
- **Package:** TO252
- **Configuration:** Single N-channel
- **VDS:** 650V
- **VGS:** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1000mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** 5A
- **Technology:** SJ_Multi-EPI
**
- **Package:** TO252
- **Configuration:** Single N-channel
- **VDS:** 650V
- **VGS:** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1000mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID):** 5A
- **Technology:** SJ_Multi-EPI
**
Domain and module applications：
Example: **
IXTY1R6N50D2-VB is widely used in high voltage power management, LED drive and motor control. Its high voltage capability makes it suitable for modules such as solar inverters, industrial power supplies and high voltage DC converters, ensuring safety and stability under harsh working conditions.
IXTY1R6N50D2-VB is widely used in high voltage power management, LED drive and motor control. Its high voltage capability makes it suitable for modules such as solar inverters, industrial power supplies and high voltage DC converters, ensuring safety and stability under harsh working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
