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IXTY1N80-VB Product details
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Product Introduction
IXTY1N80-VB is a high voltage N-channel MOSFET in TO252 package, designed for applications requiring high voltage and high reliability. Its drain-source voltage (VDS) is up to 800V, the maximum continuous current is 2A, it has good switching characteristics and conduction performance, and is suitable for use in various harsh environments.
IXTY1N80-VB is a high voltage N-channel MOSFET in TO252 package, designed for applications requiring high voltage and high reliability. Its drain-source voltage (VDS) is up to 800V, the maximum continuous current is 2A, it has good switching characteristics and conduction performance, and is suitable for use in various harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IXTU1N80-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTU1N80-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
IXTY1N80-VB is widely used in many fields, mainly including:
1. **Power conversion**: In high-voltage switching power supplies, as the main switching element, it supports stable high-voltage output.
2. **Lighting system**: Used in high-voltage LED drive circuits to help achieve efficient lighting control.
3. **Industrial automation**: In various industrial equipment, it is used for motor drive and high-voltage control systems to ensure system reliability and efficiency.
4. **Renewable energy**: In solar inverters, it optimizes energy conversion and improves the overall performance of the system.
IXTY1N80-VB is widely used in many fields, mainly including:
1. **Power conversion**: In high-voltage switching power supplies, as the main switching element, it supports stable high-voltage output.
2. **Lighting system**: Used in high-voltage LED drive circuits to help achieve efficient lighting control.
3. **Industrial automation**: In various industrial equipment, it is used for motor drive and high-voltage control systems to ensure system reliability and efficiency.
4. **Renewable energy**: In solar inverters, it optimizes energy conversion and improves the overall performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
