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IXTY1N80P-VB Product details
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Product Introduction
IXTY1N80P-VB is an N-type MOSFET designed for high voltage applications, using TO252 package. The device has extremely high voltage resistance (VDS up to 800V), and combined with SJ_Multi-EPI technology, it can operate under high temperature and high load conditions, suitable for various power management systems that require reliability.
IXTY1N80P-VB is an N-type MOSFET designed for high voltage applications, using TO252 package. The device has extremely high voltage resistance (VDS up to 800V), and combined with SJ_Multi-EPI technology, it can operate under high temperature and high load conditions, suitable for various power management systems that require reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **VDS**: 800V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2600mΩ (VGS=10V)
- **ID**: 2A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **VDS**: 800V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2600mΩ (VGS=10V)
- **ID**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
IXTY1N80P-VB is widely used in high-voltage power converters and switching power supplies, capable of handling high voltage and power requirements to ensure system stability and reliability. In industrial automation, it can be used for motor control and load drive to help optimize energy efficiency. In communication equipment, this MOSFET can be used in power amplifiers and high-voltage drive circuits to improve the overall performance of the system. In addition, in the field of home appliances, IXTY1N80P-VB is suitable for high-voltage switch and transformer applications to ensure safe and stable power transmission.
IXTY1N80P-VB is widely used in high-voltage power converters and switching power supplies, capable of handling high voltage and power requirements to ensure system stability and reliability. In industrial automation, it can be used for motor control and load drive to help optimize energy efficiency. In communication equipment, this MOSFET can be used in power amplifiers and high-voltage drive circuits to improve the overall performance of the system. In addition, in the field of home appliances, IXTY1N80P-VB is suitable for high-voltage switch and transformer applications to ensure safe and stable power transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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