IXTY18P10T-VB Product details
Product introduction:
IXTY18P10T-VB is a high-efficiency P-channel MOSFET in a TO252 package, designed for low-voltage, high-efficiency applications. Its maximum drain-source voltage (VDS) is -100V, suitable for operation in negative voltage environments. The device's on-resistance is 120mΩ and 100mΩ at a gate voltage of 4.5V and 10V, respectively, ensuring low power consumption and high performance in a variety of applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package**: TO252
- **Configuration**: Single P channel
- **VDS**: -100V
- **VGS**: ±20V
- **Vth**: -2V
- **RDS(ON)**: 120mΩ @ VGS=4.5V
- **RDS(ON)**: 100mΩ @ VGS=10V
- **ID**: -16A
- **Technology**: Trench
Domain and module applications:
Technical support:
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