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IXTY10P15T-VB Product details
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IXYT10P15T-VB Product Introduction
The IXYT10P15T-VB is a high-performance P-channel MOSFET in TO252 package, designed for medium and high voltage applications. Its drain-source voltage (VDS) can reach -150V, making it suitable for handling negative voltage environments. The device has a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of -2V, enabling it to operate at lower drive voltages. Using Trench technology, it provides low on-resistance (RDS(ON) = 160mΩ @ VGS=10V), which helps reduce power consumption and heat generation, and improves system efficiency and reliability.
The IXYT10P15T-VB is a high-performance P-channel MOSFET in TO252 package, designed for medium and high voltage applications. Its drain-source voltage (VDS) can reach -150V, making it suitable for handling negative voltage environments. The device has a gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of -2V, enabling it to operate at lower drive voltages. Using Trench technology, it provides low on-resistance (RDS(ON) = 160mΩ @ VGS=10V), which helps reduce power consumption and heat generation, and improves system efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | 160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: IXYT10P15T-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -15A
- **Technology**: Trench
- **Model**: IXYT10P15T-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -15A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Negative power switch**: The IXYT10P15T-VB can be used in negative power switch circuits, suitable for power management applications that require high voltage loads, ensuring a stable negative voltage supply.
2. **H-bridge motor drive**: In motor control applications, this P-channel MOSFET can be used as a switching device in the H-bridge, suitable for positive and negative current control, providing a smooth motor drive.
3. **Power converter**: In DC-DC converters and inverters, the IXYT10P15T-VB can effectively handle negative voltage outputs, suitable for renewable energy systems such as solar inverters.
4. **Battery management system**: This MOSFET can be used in battery management applications to control the battery charging and discharging process to ensure safe and efficient energy transfer.
5. **LED drive circuit**: In LED lighting applications, the IXYT10P15T-VB can be used for negative power drive to ensure high efficiency and reliability of LED modules.
The above is the product introduction of the IXYT10P15T-VB, detailed parameter description and examples of its applicable fields. If you need more information or specific application cases, please feel free to let us know!
1. **Negative power switch**: The IXYT10P15T-VB can be used in negative power switch circuits, suitable for power management applications that require high voltage loads, ensuring a stable negative voltage supply.
2. **H-bridge motor drive**: In motor control applications, this P-channel MOSFET can be used as a switching device in the H-bridge, suitable for positive and negative current control, providing a smooth motor drive.
3. **Power converter**: In DC-DC converters and inverters, the IXYT10P15T-VB can effectively handle negative voltage outputs, suitable for renewable energy systems such as solar inverters.
4. **Battery management system**: This MOSFET can be used in battery management applications to control the battery charging and discharging process to ensure safe and efficient energy transfer.
5. **LED drive circuit**: In LED lighting applications, the IXYT10P15T-VB can be used for negative power drive to ensure high efficiency and reliability of LED modules.
The above is the product introduction of the IXYT10P15T-VB, detailed parameter description and examples of its applicable fields. If you need more information or specific application cases, please feel free to let us know!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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