中文
English
IXTY08N50D2-VB Product details
Back to previous pageProduct introduction：
Product Introduction
IXTY08N50D2-VB is a high voltage N-channel MOSFET with 650V VDS and 30V VGS in TO252 package. The device is optimized by SJ_Multi-EPI technology and has good thermal performance and switching characteristics. Its on-resistance is 700mΩ@VGS=10V, which can effectively support medium current applications and is suitable for various power management and conversion occasions.
IXTY08N50D2-VB is a high voltage N-channel MOSFET with 650V VDS and 30V VGS in TO252 package. The device is optimized by SJ_Multi-EPI technology and has good thermal performance and switching characteristics. Its on-resistance is 700mΩ@VGS=10V, which can effectively support medium current applications and is suitable for various power management and conversion occasions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
- **Model**: IXTY08N50D2-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 700mΩ @ VGS=10V
- **ID**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTY08N50D2-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 700mΩ @ VGS=10V
- **ID**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
IXTY08N50D2-VB is widely used in modules such as high-voltage power converters, switching power supplies and inverters. It plays an important role in electric vehicles, renewable energy systems (such as solar inverters) and power electronic equipment, and can work stably under high voltage environments. This MOSFET is suitable for high-voltage DC power supply, industrial automation and power management systems, providing efficient energy control and conversion capabilities.
IXTY08N50D2-VB is widely used in modules such as high-voltage power converters, switching power supplies and inverters. It plays an important role in electric vehicles, renewable energy systems (such as solar inverters) and power electronic equipment, and can work stably under high voltage environments. This MOSFET is suitable for high-voltage DC power supply, industrial automation and power management systems, providing efficient energy control and conversion capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
